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november 2015 docid028359 rev 2 1 / 16 this is information on a product in full production. www.st.com STF9N80K5, stfi9n80k5 n - channel 800 v, 0.73 typ., 7 a mdmesh? k5 power mosfets in to - 220fp and i2pakfp packages datasheet - production data figure 1: internal schematic diagram features order code v ds r ds(on) max. i d STF9N80K5 800 v 0.90 7 a stfi9n80k5 ? industrys lowest r ds(on) x area ? industrys best figure of merit (fom) ? ultra-low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description this very high voltage n-channel power mosfet is desi gned using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order code marking package packing STF9N80K5 9n80k5 to - 220fp tube stfi9n80k5 i2pakfp(to - 281) to- 22 0fp i 2 pakfp (to-281) am15572v1_no_tab d(2) g(1) s(3)
con tents STF9N80K5, stfi9n80k5 2 / 16 docid028359 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 to - 220fp package information ................................ ...................... 11 4.2 i2pakfp (to - 281) package information ................................ ......... 13 5 revision history ................................ ................................ ............ 15
STF9N80K5, stfi9n80k5 electrical ratings docid028359 rev 2 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d (1) drain current (continuous) at t c = 25 c 7 a i d (1) drain current (continuous) at t c = 100 c 4.4 a i d (2) drain current (pulsed) 28 a p tot total dissipation at t c = 25 c 25 w v iso insulation withstand voltage (rms) from all thre e leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) peak diode recovery voltage slope 4.5 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) limited by maximum junction temperature. (2) pulse width limited by safe operating area (3) i sd ?$glgw$v9 ds peak < v (br)dss, v dd = 640 v (4) v ds ?9 table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 5 c/w r thj - amb thermal resistance junction - ambient 62.5 c/w table 4: avalanche charac teristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.4 a e ar single pulse avalanche energy (starting tj = 25 c, i d = i ar , v dd = 50 v) 200 mj
electrical characteristics STF9N80K5, stfi9n80k5 4 / 16 docid028359 rev 2 2 electrical characteristics t c = 25 c unless otherwise specified table 5: on/off - state symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 m a 800 v i dss zero gate voltage drain current v gs = 0 v, v ds = 800 v 1 a v gs = 0 v, v ds = 800 v t c = 125 c 50 a i gss gate body leakage current v ds = 0 v, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds( on) static drain - source on - resistance v gs = 10 v, i d = 3.5 a 0.73 0.90 ? table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 340 - pf c oss output capacitance - 37 - pf c rss reverse transfer capacitance - 0.65 - pf c o(tr) (1) equivalent capacitance time related v ds = 0 to 640 v, v gs = 0 v - 61 - pf c o(er) (2) equivalent capacitance energy related - 22 - pf r g intrinsic gate resistance f = 1 mhz , i d = 0 a - 7 - ? q g total gate charge v dd = 640 v, i d = 7 a v gs = 10 v see ( figure 16: "test circuit for gate charge behavior" ) - 12 - nc q gs gate - source charge - 3.8 - nc q gd gate - drain charge - 6.7 - nc notes: (1) time related is define d as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 400 v, i d =3.5 a, r g ?9 gs = 10 v see ( figure 15: "test circuit for resistive load switchi ng times" and figure 20: "switching time waveform" ) - 11 - ns t r rise time - 5.7 - ns t d(off) turn - off delay time - 65.3 - ns t f fall time - 13.6 - ns
STF9N80K5, stfi9n80k5 electrical characteristics docid028359 rev 2 5 / 16 table 8: source - drain diode symbol parameter test conditions mi n. typ. max. unit i sd source - drain current - 7 a i sdm (1) source - drain current (pulsed) - 28 a v sd (2) forward on voltage i sd = 7 a, v gs = 0 v - 1.5 v t rr reverse recovery time i sd = 7 a, di/dt = 100 a/s, v dd = 60 v see figure 17: "test circuit for inductive load switching and diode recovery times" - 292 ns q rr reverrse recovery charge - 2.66 c i rrm reverse recovery current - 18.2 a t rr reverse recovery time i sd = 7 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c see figure 17: "test circuit for inductive load switching and diode recovery times" - 477 ns q rr reverse recovery charge - 3.91 c i rrm r everse recovery current - 16.4 a notes: (1) pulse width limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5% table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source brea kdown voltage i gs = 1ma, i d = 0 a 30 - - v the built - in back - to - back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost - effective device integrity protection,thus eliminat ing the need for additional external componentry.
electrical characteristics STF9N80K5, stfi9n80k5 6 / 16 docid028359 rev 2 2.2 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance / k t p (s) 10 -4 10 -3 10 -1 10 -2 / 10 -2 10 -3 10 0 10 -1 single pulse 0.05 0.02 0.01 0.1 gc20940_zth
STF9N80K5, stfi9n80k5 electrical characteristics docid028359 rev 2 7 / 16 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs te mperature figure 11 : normalized v (br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
electrical characteristics STF9N80K5, stfi9n80k5 8 / 16 docid028359 rev 2 figure 1 4 : maximum avalanche energy vs starting t j
STF9N80K5, stfi9n80k5 test circuits docid028359 rev 2 9 / 16 3 test circuits figure 15 : test circuit for resistive load switching tim es figure 16 : test circuit for gate charge behavior figure 17 : test circuit for inductive load switching and diode recovery times figure 18 : unclamped inductive load test ci rcuit figure 19 : unclamped inductive waveform figure 20 : switching time waveform
package information STF9N80K5, stfi9n80k5 10 / 16 docid028359 rev 2 4 package information in order to meet e nvironmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STF9N80K5, stfi9n80k5 package information docid028359 rev 2 11 / 16 4.1 to - 220fp package information figure 21 : to - 220fp package outline
package information STF9N80K5, stfi9n80k5 12 / 16 docid028359 rev 2 table 10: to - 220fp package mechanical data dim. mm min. typ. max . a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
STF9N80K5, stfi9n80k5 package information docid028359 rev 2 13 / 16 4.2 i 2 pakfp (to - 281) package informati on figure 22 : i2pakfp (to - 281) package outline 8291506 re v . c
package information STF9N80K5, stfi9n80k5 14 / 16 docid028359 rev 2 table 11: i2pakfp (to - 281) mechanical data dim. mm min. typ. max. a 4.40 4.60 b 2.50 2.70 d 2.50 2. 75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.50 7.60 7.70
STF9N80K5, stfi9n80k5 revision hist ory docid028359 rev 2 15 / 16 5 revision history table 12: document revision history date revision changes 06 - oct - 2015 1 first release. 11 - nov - 2015 2 modified: table 2: "absolute maximum ratings" , table 3: "thermal data" , table 4: "avalanche characteristics" , table 6: "dynamic" , table 7: "switching times" and table 8: "sourc e - drain diode" . added: section 3.1: "electrical characteristics (curves)" minor text changes
STF9N80K5, stfi9n80k5 16 / 16 docid028359 rev 2 important notice please read carefully st 0lfurhohfwurqlfv19dqglwvvxevlgldulhv367uhvhuyhwkhuljkwwrpdnhfkdqjhvfruuhfwlrqvhqkdqfhphqwvprglilfdwlrqv and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st surgxfwvehiruhsodflqjrughuv67surgxfwvduhvrogsxuvxdqwwr67?vwhupvdqgfrqglwlrqvrivdohlqsodfhdwwkhwlphriru der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the ghvljqri3xufkdvhuv?surgxfwv no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces informati on previously supplied in any prior versions of this document. ? 2015 stmicroelectronics all rights reserved

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